Ferroelectric dielectric technology

Abstract

Ferroelectric thin film, which is a kind of functional dielectric, especially provided with hysteresis characteristics in P-E curve, has drawn wide attention in the LSI field, because of its ideal features, like nonvolatility and fast programming operation at low voltage. From various points of view, for example, academic, industry and so on, basic studies have been drastically advanced for this decade. Recently, ferroelectric memory, called FeRAM, succeeds practically in volume production. At this stage, interestis in the theoretical prediction of life of the products and their application to logic devices. This paper has described a leading study on reliability physics and some applications of ferroelectric dielectric technology. Finally promising perspectives on the ferroelectric dielectric technology are shown.