Virtual metrology for plasma particle in plasma etching equipment

S. Imai
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引用次数: 15

Abstract

Virtual metrology for a plasma particle in plasma etching equipment is described in this paper for the first time. No direct measurement of plasma particles is carried out by an inspection tool but the generation of plasma particles can be predicted by detecting plasma density change indirectly measured using an equipment monitoring tool. It is found that the plasma density change can be detected by several equipment parameters like self-bias voltage using PLS analysis. The correlation coefficient of 0.75 is obtained between measured number of particles and predicted number of particles by a virtual parameter. It is demonstrated that the virtual parameter generated several parameters is useful as virtual metrology for a plasma particle.
等离子体蚀刻设备中等离子体粒子的虚拟测量
本文首次介绍了等离子体刻蚀设备中等离子体粒子的虚拟测量方法。检测工具不能直接测量等离子体粒子,但可以通过检测等离子体密度变化来预测等离子体粒子的产生,等离子体密度变化是通过设备监测工具间接测量的。利用PLS分析发现,等离子体密度的变化可以通过自偏置电压等几个设备参数来检测。通过虚拟参数,得到实测粒子数与预测粒子数的相关系数为0.75。结果表明,由若干参数生成的虚拟参数可作为等离子体粒子的虚拟计量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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