{"title":"PORTLESS low power mux architecture with line hard duplication","authors":"Lahcen Hamouche, B. Allard","doi":"10.1109/IMW.2010.5488404","DOIUrl":null,"url":null,"abstract":"Embedded cache memories consumes a large percentage of the dynamic and static energy in System-On-Chip (SOC). Energy consumption expects to increase in advanced technologies. Write and read operations operate charging and discharging of large bitline capacitances. Multiplexors are introduced in 6T-SRAM to reduce column size. Unfortunately read current is not reduced and even increases. Considering the 5T Portless SRAM, an original multiplexor structure is presented that offers a significant gain in active energy consumption. The multiplexor benefits from a hard line duplication technique that copies an addressed line into an other line in one clock cycle. The advantages of the latter duplication technique are presented in details. Moreover Portless bitcell is more stable, suffers less leakage than 6T SRAM bitcell. The paper confirms that Portless SRAM is a candidate alternative structure to 6T SRAM in advanced technologies.","PeriodicalId":149628,"journal":{"name":"2010 IEEE International Memory Workshop","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2010.5488404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Embedded cache memories consumes a large percentage of the dynamic and static energy in System-On-Chip (SOC). Energy consumption expects to increase in advanced technologies. Write and read operations operate charging and discharging of large bitline capacitances. Multiplexors are introduced in 6T-SRAM to reduce column size. Unfortunately read current is not reduced and even increases. Considering the 5T Portless SRAM, an original multiplexor structure is presented that offers a significant gain in active energy consumption. The multiplexor benefits from a hard line duplication technique that copies an addressed line into an other line in one clock cycle. The advantages of the latter duplication technique are presented in details. Moreover Portless bitcell is more stable, suffers less leakage than 6T SRAM bitcell. The paper confirms that Portless SRAM is a candidate alternative structure to 6T SRAM in advanced technologies.