PORTLESS low power mux architecture with line hard duplication

Lahcen Hamouche, B. Allard
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引用次数: 2

Abstract

Embedded cache memories consumes a large percentage of the dynamic and static energy in System-On-Chip (SOC). Energy consumption expects to increase in advanced technologies. Write and read operations operate charging and discharging of large bitline capacitances. Multiplexors are introduced in 6T-SRAM to reduce column size. Unfortunately read current is not reduced and even increases. Considering the 5T Portless SRAM, an original multiplexor structure is presented that offers a significant gain in active energy consumption. The multiplexor benefits from a hard line duplication technique that copies an addressed line into an other line in one clock cycle. The advantages of the latter duplication technique are presented in details. Moreover Portless bitcell is more stable, suffers less leakage than 6T SRAM bitcell. The paper confirms that Portless SRAM is a candidate alternative structure to 6T SRAM in advanced technologies.
无端口低功耗多路复用架构,线路硬复制
嵌入式高速缓存存储器在片上系统(SOC)中消耗了很大比例的动态和静态能量。能源消费预计将增加,先进技术。写和读操作操作大的位线电容的充放电。在6T-SRAM中引入多路复用器以减小列尺寸。不幸的是,读电流没有减少,甚至增加。考虑到5T无端口SRAM,提出了一种原始的多路复用结构,可以显著提高主动能耗。多路复用得益于硬线路复制技术,该技术在一个时钟周期内将寻址线路复制到另一条线路中。详细介绍了后一种复制技术的优点。此外,Portless位单元比6T SRAM位单元更稳定,泄漏更少。本文证实了无端口SRAM在先进技术中是6T SRAM的备选结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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