A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output

Y. Baeyens, Y. Chen
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引用次数: 47

Abstract

A fully integrated push-push voltage controlled oscillator (VCO) with simultaneous differential fundamental output is realized using an advanced 0.13/spl mu/m SiGe HBT process. A maximum oscillation frequency of 155 GHz, up to -5 dBm output power at 150 GHz and 30 GHz wide tuning range is achieved. The measured phase-noise in the linear tuning range is around -85 dBc/Hz at 1 MHz offset from carrier. Up to +3 dBm output power and 6 dB lower phase noise is obtained at each of the fundamental frequency differential ports. For a similar but fixed frequency oscillator, -2 dBm output power and a low phase noise of less than -90 dBc/Hz is measured at 1 MHz from the 140 GHz carrier.
具有同步差分v波段输出的单片集成150 GHz SiGe HBT推推式压控振荡器
采用先进的0.13/spl mu/m SiGe HBT工艺实现了具有同步差分基波输出的全集成推推压控振荡器(VCO)。最大振荡频率为155 GHz,在150 GHz和30 GHz宽调谐范围时输出功率高达-5 dBm。在距离载波1 MHz的偏移处,线性调谐范围内测量到的相位噪声约为-85 dBc/Hz。在每个基频差分端口可获得+ 3dbm输出功率和6db低相位噪声。对于类似的固定频率振荡器,在140ghz载波的1mhz处测量到-2 dBm输出功率和小于- 90dbc /Hz的低相位噪声。
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