A new operation mode "Surfing mode" in high-low-type GaAs IMPATTs

1976 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1976.188995

Y. Hirachi, K. Kobayashi, K. Ogasawara, T. Hisatsugu, Y. Toyama

引用次数: 8

Abstract

A new operation mode "Surfing mode" is proposed and verified experimentally in high-low-type GaAs IMPATTs. This mode is characterized by the concept that the avalanche charge pulse drifts synchronously with the movement of the front edge of the depletion layer at the higher velocity than the scattering-limited velocity. High- -low-type GaAs IMPATTs designed so as to operate effectively in the "Surfing mode" exhibited output powers 15 watts (ΔTj=210°C) at 6. 1 GHz 25 percent efficiencies.

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高-低型GaAs impts的一种新的工作模式“冲浪模式”

提出了一种新的工作模式“冲浪模式”，并在高低型GaAs impts中进行了实验验证。这种模式的特点是雪崩电荷脉冲以高于散射限制速度的速度与耗尽层前缘的运动同步漂移。设计用于在“冲浪模式”下有效工作的高-低型GaAs IMPATTs在6时的输出功率为15瓦(ΔTj=210°C)。1 GHz, 25%的效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1976 International Electron Devices Meeting

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