Ti Film Thickness Influences on the Back Channel Etched Amorphous InGaZnO4 Thin Film Transistors

Abstract

Back channel etched (BCE) amorphous InGaZnO4(a–IGZO) thin film transistors are fabricated, in which Ti thin film is employed as a protective layer for a-IGZO. The optimal Ti thickness is found to be 4-5 nm, and a-IGZO will be well protected and excellent transfer curves can be obtained after O2 plasma and annealing treatment. Besides, by the introduction of the Ti layer, the devices obtain better stress stability.