A. Karkri, A. Chetouani, M. Benaichi, D. Moussaid, S. E. Elqebbaj
{"title":"How does cosmic rays affect multijunction solar cells","authors":"A. Karkri, A. Chetouani, M. Benaichi, D. Moussaid, S. E. Elqebbaj","doi":"10.1109/icoa.2018.8370539","DOIUrl":null,"url":null,"abstract":"Numerical simulation of solar cells degradation has become a hot topic in the researches over the past few years, especially in the space industry, where photovoltaic is the main power source and high-energy radiations are found. In this paper, we present a numerical model to predict the radiation response of a multi-junction solar cell, resulting from ionization and excitation of semiconductor's atoms by charged cosmic rays. The developed model is based on the drift-diffusion semiconductor equations, in which we incorporate some additional terms to include the irradiation-induced defects. These additional terms are modeled vias the Shockley-Red-Hall theory. In addition, this model uses the quantum mechanical Bethe-Bloch formalism to describe the reaction of both heavy and light charged particles with semiconductor materials, forming the solar cells.","PeriodicalId":433166,"journal":{"name":"2018 4th International Conference on Optimization and Applications (ICOA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th International Conference on Optimization and Applications (ICOA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icoa.2018.8370539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Numerical simulation of solar cells degradation has become a hot topic in the researches over the past few years, especially in the space industry, where photovoltaic is the main power source and high-energy radiations are found. In this paper, we present a numerical model to predict the radiation response of a multi-junction solar cell, resulting from ionization and excitation of semiconductor's atoms by charged cosmic rays. The developed model is based on the drift-diffusion semiconductor equations, in which we incorporate some additional terms to include the irradiation-induced defects. These additional terms are modeled vias the Shockley-Red-Hall theory. In addition, this model uses the quantum mechanical Bethe-Bloch formalism to describe the reaction of both heavy and light charged particles with semiconductor materials, forming the solar cells.