A millimeter-wave power amplifier with 25dB power gain and +8dBm saturated output power

ESSCIRC 2007 - 33rd European Solid-State Circuits Conference Pub Date : 2007-09-01 DOI:10.1109/ESSCIRC.2007.4430297

Yanyu Jin, M. Sanduleanu, Eduardo Alarcon Rivero, J. Long

引用次数: 25

Abstract

A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip transmission lines with ground sidewalls are used for signal distribution, matching and load resonators. The 3-stage PA comprises identical cascode stages with inter-stage matching. The measured peak power-gain is 25 dB at 52 GHz and 10 dB at 60 GHz with a -3 dB bandwidth of 46-53 GHz. Saturated output power is +8 dBm with a PAE of 7%. The -1 dB compression point is 5 dBm. Extra process options are not used (e.g. MIM capacitors, trimmed polysilicon resistors, or thick oxide FETs). The 1180times960 mum2 die consumes a total of 73 mA from a 1.5 V (plusmn10%) power supply.

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具有25dB功率增益和+8dBm饱和输出功率的毫米波功率放大器

介绍了一种采用90纳米块体CMOS技术的毫米波功率放大器。带接地侧壁的微带传输线用于信号分配、匹配和负载谐振器。三级PA包括相同的级联级，级间匹配。测量到的峰值功率增益在52 GHz时为25 dB，在60 GHz时为10 dB，带宽为46-53 GHz，带宽为-3 dB。饱和输出功率为+ 8dbm, PAE为7%。-1 dB压缩点为5dbm。不使用额外的工艺选项(例如MIM电容器，修剪多晶硅电阻器或厚氧化场效应管)。1180times960 mum2芯片从1.5 V(+ 10%)电源中总共消耗73 mA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESSCIRC 2007 - 33rd European Solid-State Circuits Conference

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