Optimization on NMOS-based power-rail ESD clamp circuits with gate-driven mechanism in a 0.13-μm CMOS technology

Abstract

NMOS-based power-rail ESD clamp circuits with gate-driven mechanism have been widely used to obtain the desired ESD protection ability. All of them are based on a similar circuit scheme with 3-stage inverters to drive the ESD clamp NMOS transistor with large device dimension. In this work, the designs with 3-stage-inverter and 1-stage-inverter controlling circuits have been studied to verify the optimal circuit schemes in NMOS-based power-rail ESD clamp circuits.