Development of a production worthy copper CMP process

IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168) Pub Date : 1998-09-23 DOI:10.1109/ASMC.1998.731616

K. Wijekoon, S. Mishra, S. Tsai, Kumar Puntambekar, M. Chandrachood, F. Redeker, R. Tolles, B. Sun, L. Chen, T. Pan, P. Li, S. Nanjangud, G. Amico, J. Hawkins, T. Myers, R. Kistler, V. Brusic, S. Wang, I. Cherian, L. Knowles, C. Schmidt, C. Baker

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引用次数: 9

Abstract

A chemical mechanical polishing (CMP) process for copper damascene structures has been developed and characterized on a second generation, multiple platen polishing tool. Several formulations of experimental copper slurries containing alumina abrasive particles were evaluated for their selectivity of copper to Ta, TaN and PETEOS films. The extent of copper dishing and oxide erosion of these slurries is investigated with various process parameters such as slurry flow rate, platen speed and wafer pressure. The amount of dishing and erosion is found to be largely dependent on process parameters as well as the slurry composition. It is shown that the extent of oxide erosion and copper dishing can be significantly reduced by using a two slurry copper polish process (one slurry to polish copper and another to polish barrier layers) in conjunction with an optical end-point detection system.

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开发一种具有生产价值的铜CMP工艺

开发了一种化学机械抛光(CMP)工艺，并在第二代多台板抛光工具上进行了表征。考察了几种含氧化铝磨料颗粒的实验铜浆配方对铜对Ta、TaN和PETEOS膜的选择性。在不同的工艺参数下，如料浆流速、压板速度和压片压力，研究了这些料浆的镀铜和氧化蚀的程度。发现盘蚀和侵蚀的数量在很大程度上取决于工艺参数以及浆液成分。结果表明，通过结合光学端点检测系统使用两种浆液铜抛光工艺(一种浆液抛光铜，另一种浆液抛光阻挡层)，可以显著减少氧化物侵蚀和铜镀层的程度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)

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