Activation energy of thermal oxidation germanium oxide on germanium substrates

N. A. A. Halim, S. K. Sahari, A. A. Hamzah, B. Majlis, S. Marini, L. Hasanah, M. Kashif
{"title":"Activation energy of thermal oxidation germanium oxide on germanium substrates","authors":"N. A. A. Halim, S. K. Sahari, A. A. Hamzah, B. Majlis, S. Marini, L. Hasanah, M. Kashif","doi":"10.1109/SMELEC.2018.8481204","DOIUrl":null,"url":null,"abstract":"The activation energy of GeO2 was studied by determining the oxide thickness versus temperature from lower to higher oxidation temperature in the range between 450°C and 600°C. It was found that a linear relationship can be obtained between oxidation time and oxide thickness for the oxidation temperature between 450 and 575°C while for the 600°C oxidation, a linear relationship can be obtained for the shorter oxidation time. The rate of oxidation increased until 0.55 and abruptly decreased after increasing oxidation temperature to 600°C which implies that the oxygen intermixing occurs during higher oxidation (600°C) rather that diffusion mechanism that leads to the lower activation energy.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2018.8481204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The activation energy of GeO2 was studied by determining the oxide thickness versus temperature from lower to higher oxidation temperature in the range between 450°C and 600°C. It was found that a linear relationship can be obtained between oxidation time and oxide thickness for the oxidation temperature between 450 and 575°C while for the 600°C oxidation, a linear relationship can be obtained for the shorter oxidation time. The rate of oxidation increased until 0.55 and abruptly decreased after increasing oxidation temperature to 600°C which implies that the oxygen intermixing occurs during higher oxidation (600°C) rather that diffusion mechanism that leads to the lower activation energy.
锗基热氧化氧化锗的活化能
在450 ~ 600℃的氧化温度范围内,通过测定氧化层厚度随温度的变化,研究了GeO2的活化能。结果表明,在450 ~ 575℃氧化温度下,氧化时间与氧化厚度呈线性关系;在600℃氧化温度下,氧化时间越短,氧化厚度与氧化时间呈线性关系。氧化速率上升至0.55,当氧化温度升高至600℃时,氧化速率突然下降,这说明在较高的氧化温度下(600℃)发生了氧混合,而不是扩散机制,导致活化能降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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