A novel ultra high voltage 4H-SiC bipolar device: MAGBT

Abstract

A novel normally-off SiC MOS accumulated channel gate bipolar transistor, called MAGBT, with a high blocking voltage is proposed for high voltage applications. This MAGBT can be expected to realize a high blocking voltage and a low on-state voltage drop. Even if the blocking voltage is greater than 20 kV, the on-state voltage drop at 100 A/cm/sup 2/ can be expected to be less than 6.5 V. Furthermore, high safety against latch up can be expected.