Can beyond-CMOS devices illuminate dark silicon?

Abstract

Throughout the last decade, the microprocessor industry has been struggling to preserve the benefits of Moore's Law scaling. The persistent scaling of CMOS technology no longer yields exponential performance gains due in part to the growth of dark silicon. With each subsequent technology node generation, power constraints resulting from factors such as sub-threshold leakage currents are projected to further limit the number of transistors that can be simultaneously powered. To overcome the limits of CMOS devices, researchers are working to develop “beyond-CMOS” device technologies. To determine the most promising beyond-CMOS devices, it is necessary to benchmark them against CMOS. In this paper, we present the design and validation of an analytical benchmarking model that evaluates CMOS and beyond-CMOS devices at the architectural-level. Our model is built from the device to the architectural/application-level. Our target architecture is a symmetric multi-core processor executing highly parallel applications (i.e., PARSEC). As a case study, we select one class of promising beyond-CMOS devices, tunneling field-effect transistors, to evaluate against CMOS.