{"title":"A 40-nV/VHz 0.0145-mm2 sensor readout circuit with chopped VCO-based CTDSM in 40-nm CMOS","authors":"Chih-Chan Tu, Yu-Kai Wang, Tsung-Hsien Lin","doi":"10.1109/ASSCC.2016.7844131","DOIUrl":null,"url":null,"abstract":"A sensor readout circuit employing chopped VCO-based CTDSM is presented in this paper. This VCO-based ADC features direct connection to the sensors to eliminate pre-amplifier. The VCO is designed as a Gm-CCO, which is a Gm stage cascaded with the folded-cascode current-controlled oscillator. The proposed circuit ensures a high input impedance. Furthermore, the main noise and offset contributor, the Gm stage, is mitigated by chopping operation. The VCO-based CTDSM is implemented in 40-nm CMOS. The whole circuit draws 14 μA from 1.2-V supply. With a 2.4-mVpp input, it achieves 49.43 dB SNDR over 5-kHz BW and has SFDR of 59.5 dB. The input-referred noise is 40nV/√Hz. The chip area is only 0.0145 mm2.","PeriodicalId":278002,"journal":{"name":"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"171 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2016.7844131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A sensor readout circuit employing chopped VCO-based CTDSM is presented in this paper. This VCO-based ADC features direct connection to the sensors to eliminate pre-amplifier. The VCO is designed as a Gm-CCO, which is a Gm stage cascaded with the folded-cascode current-controlled oscillator. The proposed circuit ensures a high input impedance. Furthermore, the main noise and offset contributor, the Gm stage, is mitigated by chopping operation. The VCO-based CTDSM is implemented in 40-nm CMOS. The whole circuit draws 14 μA from 1.2-V supply. With a 2.4-mVpp input, it achieves 49.43 dB SNDR over 5-kHz BW and has SFDR of 59.5 dB. The input-referred noise is 40nV/√Hz. The chip area is only 0.0145 mm2.