Investigation of deep levels in AlGaN/GaN HEMTs on silicon substrate by conductance deep level transient spectroscopy

Abstract

We report investigation of electron traps in AlGaN/GaN HEMTs, grown on silicon by molecular beam epitaxy. Deep levels analysis was performed by conductance deep level transient spectroscopy (CDLTS) under a drain pulse. CDLTS measurements reveal three traps with the energy levels of 0.11, 0.17 and 0.22 eV.