Chenglin Qi, Qinjin Wang, Li Wang, Zhiqiang Liu, X. Yi, Jinmin Li, Junxi Wang
{"title":"A novel surface treatment for the sliver ohmic contacts to P-GaN","authors":"Chenglin Qi, Qinjin Wang, Li Wang, Zhiqiang Liu, X. Yi, Jinmin Li, Junxi Wang","doi":"10.1109/SSLCHINA.2016.7804338","DOIUrl":null,"url":null,"abstract":"With the development of the GaN-based light-emitting diodes (LEDs), the need for p-GaN contacts with low resistivity, good thermal stability, and high reflectivity has become more urgent. In this paper, a novel method of surface treatment on p-GaN to form good ohmic contacts between p-GaN and Ag was proposed. We proposed a novel structure with Ag/ultrathin-ITO/p-GaN contact which shows a low contact resistivity as well as a high reflectance attributed to some isolated islands of ITO and the absence of Ni layer. The calculated ρc of the new structure which is lower than 7×10−2W/cm2 based on the CTLM method showed that the Ag/ultrathin-ITO/p-GaN contact has a lower contact resistivity compared to the contact without the ultrathin ITO layer of which the ρc is higher than 2 W/cm2 The Ag film cannot be ripped off by the tape which shows a good adhesion. The LEDs fabricated with this contacts showed a 30% higher luminance at 20mA forward currents as compared to the conventional LEDs.","PeriodicalId":413080,"journal":{"name":"2016 13th China International Forum on Solid State Lighting (SSLChina)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 13th China International Forum on Solid State Lighting (SSLChina)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLCHINA.2016.7804338","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
With the development of the GaN-based light-emitting diodes (LEDs), the need for p-GaN contacts with low resistivity, good thermal stability, and high reflectivity has become more urgent. In this paper, a novel method of surface treatment on p-GaN to form good ohmic contacts between p-GaN and Ag was proposed. We proposed a novel structure with Ag/ultrathin-ITO/p-GaN contact which shows a low contact resistivity as well as a high reflectance attributed to some isolated islands of ITO and the absence of Ni layer. The calculated ρc of the new structure which is lower than 7×10−2W/cm2 based on the CTLM method showed that the Ag/ultrathin-ITO/p-GaN contact has a lower contact resistivity compared to the contact without the ultrathin ITO layer of which the ρc is higher than 2 W/cm2 The Ag film cannot be ripped off by the tape which shows a good adhesion. The LEDs fabricated with this contacts showed a 30% higher luminance at 20mA forward currents as compared to the conventional LEDs.