Effect of barrier geometry for HTS ion damage Josephson junctions

Abstract

The large area (2D) technology for high temperature superconducting (HTS) Josephson junctions and circuits we are developing is based on the ion damage process established at LPEM [1, 2]. The aim of this work was to do a statistical analysis of the effect of geometrical parameters on Josephson junctions properties. Only junction length and barrier thickness are varied; film thickness is kept constant at a nominal 150nm. Statistical analysis of characteristic parameters (Ic, Rn, temperature range of operation...) is presented.