The Characterization of KrF Photoresists and the Effect of Different Chromophore Bulkiness on Line Edge Roughness (LER) for Submicron Technology

2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI:10.1109/SMELEC.2006.380781

Ahyar Bakri, M.J. Manaf, K. Wahab, I. Bin Ahmad

{"title":"The Characterization of KrF Photoresists and the Effect of Different Chromophore Bulkiness on Line Edge Roughness (LER) for Submicron Technology","authors":"Ahyar Bakri, M.J. Manaf, K. Wahab, I. Bin Ahmad","doi":"10.1109/SMELEC.2006.380781","DOIUrl":null,"url":null,"abstract":"This research characterizes line edge roughness (LER), determines which resist has lowest LER for all process variations, and investigates the effect of chromophore bulkiness on LER. Three KrF photoresists with different chromophore bulkiness were evaluated. The characteristics evaluated were depth of focus (DOF), profile and resolution, LER, exposure latitude, iso-dense bias and CD linearity. Different feature sizes were tested from 100 nm to 190 nm. From the results, it is seen that resist PI has the lowest average LER for all process conditions and variations with a 3 sigma value of 10.074. This is followed by resist P5 and P6 with a 3 sigma LER value of 12.562 and 15.468. It is concluded that high chromophore bulkiness results in high UV activation. This is seen from the LER for resist P6 that is the highest out of all the photoresist. Reducing the chromophore bulkiness will reduce LER until it reaches a saturation point where reduction will not result in any lower LER. Reducing the chromophore bulkiness further beyond the saturation point will in fact increase the LER.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380781","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

This research characterizes line edge roughness (LER), determines which resist has lowest LER for all process variations, and investigates the effect of chromophore bulkiness on LER. Three KrF photoresists with different chromophore bulkiness were evaluated. The characteristics evaluated were depth of focus (DOF), profile and resolution, LER, exposure latitude, iso-dense bias and CD linearity. Different feature sizes were tested from 100 nm to 190 nm. From the results, it is seen that resist PI has the lowest average LER for all process conditions and variations with a 3 sigma value of 10.074. This is followed by resist P5 and P6 with a 3 sigma LER value of 12.562 and 15.468. It is concluded that high chromophore bulkiness results in high UV activation. This is seen from the LER for resist P6 that is the highest out of all the photoresist. Reducing the chromophore bulkiness will reduce LER until it reaches a saturation point where reduction will not result in any lower LER. Reducing the chromophore bulkiness further beyond the saturation point will in fact increase the LER.

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KrF光刻胶的表征及不同发色团体积对亚微米工艺线边缘粗糙度的影响

本研究表征了线边缘粗糙度(LER)，确定了在所有工艺变化中哪种抗蚀剂具有最低的LER，并研究了发色团体积对LER的影响。对三种不同发色团体积的KrF光刻胶进行了评价。评估的特征包括焦深(DOF)、轮廓和分辨率、LER、曝光纬度、等密度偏差和CD线性度。在100 ~ 190 nm范围内测试了不同的特征尺寸。从结果可以看出，抗蚀剂PI在所有工艺条件下的平均LER最低，其3 σ值为10.074。其次是抗蚀剂P5和P6，其3 σ LER值分别为12.562和15.468。结果表明，高发色团体积导致高UV活化。这是从电阻P6的LER中看到的，它是所有光刻胶中最高的。减少生色团的体积会减少LER，直到达到饱和点，在那里减少不会导致任何更低的LER。在饱和点以上进一步减小生色团的体积实际上会增加LER。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2006 IEEE International Conference on Semiconductor Electronics

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