New Electromigration Model and Its Potential Application on Degradation Simulation for FinFET SRAM

Abstract

In this paper, a new EM model is proposed to describe the interconnect resistance change. This model consists of a time-dependent hydrostatic stress distribution and resistance shift calculations. Hydrostatic stress is obtained from the solution of material transport equations and suitable boundary conditions. The resistance shift is calculated from the stress distribution, atomic divergence, and a special resistance evaluation methodology. Then the calibrated EM model is applied to simulation for a FinFET SRAM array while considering process parameter variations. EM effects on SRAM performance degradation are analyzed.