Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks

Abstract

The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics.