High-Q integrated passive elements for high frequency applications

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398158

Dimitris Peroulis, S. Mohammadi, L. Katehi

引用次数: 5

Abstract

Using MEMS fabrication technology, we have demonstrated very high frequency and high quality factor (Q) varactors, inductors and transformers on a Si substrate. On high resistivity Si, this technology results in broadband analog varactors with continuous tuning range as high as 3:1 and 1 nH inductors with Q>60 at frequencies of 3 to 7 GHz. High efficiency high-Q transformers with coupling factors 0.6

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用于高频应用的高q集成无源元件

利用MEMS制造技术，我们在Si衬底上展示了非常高频和高质量因数(Q)的变容管，电感器和变压器。在高电阻率Si上，该技术可以在3至7 GHz频率下产生连续调谐范围高达3:1的宽带模拟变容管和Q>60的1 nH电感。耦合系数0.6

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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