The impact of channel engineering on the performance reliability and scaling of CHISEL NOR flash EEPROMs

Abstract

The programming performance, cycling endurance and scaling of CHISEL NOR flash EEPROMs is studied for two different (halo and no-halo) channel engineering schemes. Programming speed under identical bias, bias requirements under similar programming time, cycling endurance and drain disturb are compared. The scaling properties of programming time (at a fixed bias), bias (at a fixed programming time) and program/disturb margin are studied as cell floating gate length is scaled. The relative merits of these channel engineering schemes are discussed from the viewpoint of futuristic CHISEL cell design.