{"title":"Calibration and Measurement of Ceramic Microstrip Circuits Using a Wafer Probe Station","authors":"J. Wallace, G. A. Ellis","doi":"10.1109/ARFTG.1989.323934","DOIUrl":null,"url":null,"abstract":"Two methods for calibration and measurement of microstrip circuits fabricated on 10 mil thick alumina will be presented. The first method may be used from 7 to 30 GHz. The second method is best suited for measurements below 10 GHz. The basic measurement configuration consisted of: 1) an automatic network analyzer with thru-reflect-line (TRL) [l] calibration capability; 2) wafer probe station and coplanar probe heads normally used for measurement of GaAs circuits; and 3) microstrip TRL calibration standards with coplanar to microstrip transitions. Data will be presented on two types of coplanar to microstrip transitions including: 1) circuit dimensions; 2) transition data calibrated to the coplanar probe tips; 3) calibration data using microstrip TRL calibrations; 4) repeatability data of the transitions including circuit to circuit variations and substrate to substrate variations; and 5) error estimates.","PeriodicalId":358927,"journal":{"name":"33rd ARFTG Conference Digest","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"33rd ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1989.323934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Two methods for calibration and measurement of microstrip circuits fabricated on 10 mil thick alumina will be presented. The first method may be used from 7 to 30 GHz. The second method is best suited for measurements below 10 GHz. The basic measurement configuration consisted of: 1) an automatic network analyzer with thru-reflect-line (TRL) [l] calibration capability; 2) wafer probe station and coplanar probe heads normally used for measurement of GaAs circuits; and 3) microstrip TRL calibration standards with coplanar to microstrip transitions. Data will be presented on two types of coplanar to microstrip transitions including: 1) circuit dimensions; 2) transition data calibrated to the coplanar probe tips; 3) calibration data using microstrip TRL calibrations; 4) repeatability data of the transitions including circuit to circuit variations and substrate to substrate variations; and 5) error estimates.