Comparison of electromigration phenomenon between aluminum interconnection of various multilayered materials

Abstract

The electromigration characteristics of a multilayered system were found to be divided into three stages. The mechanism leading to the stages is discussed in terms of the process of microvoid growth during the electromigration stressing and is correlated with the amount of Si precipitation and the size of the grain boundary of Al films, the reaction layer at the interface, and the resistivity of the barrier metal. The experiments were carried out for MoSi, TiN, and TiW film deposited on oxidized Si