A symmetrical bipolar structure

1980 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1980.189752

D. Tang, V. Silvestri, H.N. Yu, A. Reisman

引用次数: 10

Abstract

This paper presents symmetrical bipolar-transistor structures suitable for bilateral operation. Such structures were fabricated using a technique of simultaneous-growth of epitaxial and polycrystalline Si on a stack structure. Vertical symmetrical transistors have been built and showed an emitter-base diode breakdown voltage of 7V, a current gain of 17.

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对称双极结构

本文提出了适用于双边工作的对称双极晶体管结构。这种结构是利用外延和多晶硅在堆叠结构上同时生长的技术制造的。垂直对称晶体管已经建成，并显示出发射极二极管击穿电压为7V，电流增益为17。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1980 International Electron Devices Meeting

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