A 30 GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element

S. Nightingale, M. Upton, U. Mishra, S. Palmateer, P.M. Smith
{"title":"A 30 GHz Monolithic Single Balanced Mixer with Integrated Dipole Receiving Element","authors":"S. Nightingale, M. Upton, U. Mishra, S. Palmateer, P.M. Smith","doi":"10.1109/mcs.1985.1113643","DOIUrl":null,"url":null,"abstract":"A 30 GHz monolithic low noise balanced mixer has been developed using an integrated 'bow tie' antenna/WG transition and low parasitic Mott diodes. The diodes and mixer circuit were developed on General Electric grown MBE material and were fabricated using a plated air bridge technology. Measurements on the diode at DC and RF showed that the zero bias junction capacitance was 0.025 pF and the series resistance was 10 ohms. A conversion loss of 6 dB was measured at 30 GHz with a 1 GHz IF.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mcs.1985.1113643","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

A 30 GHz monolithic low noise balanced mixer has been developed using an integrated 'bow tie' antenna/WG transition and low parasitic Mott diodes. The diodes and mixer circuit were developed on General Electric grown MBE material and were fabricated using a plated air bridge technology. Measurements on the diode at DC and RF showed that the zero bias junction capacitance was 0.025 pF and the series resistance was 10 ohms. A conversion loss of 6 dB was measured at 30 GHz with a 1 GHz IF.
带有集成偶极子接收元件的30ghz单片平衡混频器
采用集成的“领结”天线/WG过渡和低寄生莫特二极管,开发了一种30 GHz单片低噪声平衡混频器。二极管和混频器电路是在通用电气生长的MBE材料上开发的,并采用镀气桥技术制造。直流和射频测试结果表明,零偏置结电容为0.025 pF,串联电阻为10欧姆。在1 GHz中频下,在30 GHz下测量到6 dB的转换损耗。
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