Improvement of Transport Mobility in Asymmetric V-shaped Double Quantum Well Structure

Abstract

The improvement of transport electron mobility μ is theoretically reported through a change in well width w in an asymmetric V-shaped double quantum well (AVDQW) structure. The side barriers are doped with different doping concentrations i.e., Nd1 (vary) and Nd2 (fixed) towards the substrate and surface respectively which produces asymmetry in the structure. An increase in w enhances μ. The magnitude of μ is decided by the alloy disorder scattering but the trend in the variation of μ as a function of Nd1 is mainly decided by the impurity scattering.