Amin Aghighi, A. Alameh, M. Taherzadeh‐Sani, F. Nabki
{"title":"A 10-Gb/s low-power low-voltage CTLE using gate and bulk driven transistors","authors":"Amin Aghighi, A. Alameh, M. Taherzadeh‐Sani, F. Nabki","doi":"10.1109/ICECS.2016.7841171","DOIUrl":null,"url":null,"abstract":"The continuous time linear equalizer (CTLE) which compensates for the high frequency loss of electrical channels is one of the key components in the design of digital serializer / desrializer (SerDes) circuits. A new technique is described to improve the CTLE performance without any area or power overhead. This technique utilizes the bulk pin of transistors as a second gate. The proposed CTLE is designed and simulated in 130 nm CMOS technology. Post-layout simulation results demonstrate that the proposed technique can improve the eye opening of the conventional CTLE by approximately 68% at 10-Gb/s. The proposed CTLE compensates for the 12 dB loss of a 12 inches backplane at 10-Gb/s. The power consumption is only of 4.1 mW and 2 mW for a 1.2 V and 0.7 V power supply, respectively.","PeriodicalId":205556,"journal":{"name":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2016.7841171","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The continuous time linear equalizer (CTLE) which compensates for the high frequency loss of electrical channels is one of the key components in the design of digital serializer / desrializer (SerDes) circuits. A new technique is described to improve the CTLE performance without any area or power overhead. This technique utilizes the bulk pin of transistors as a second gate. The proposed CTLE is designed and simulated in 130 nm CMOS technology. Post-layout simulation results demonstrate that the proposed technique can improve the eye opening of the conventional CTLE by approximately 68% at 10-Gb/s. The proposed CTLE compensates for the 12 dB loss of a 12 inches backplane at 10-Gb/s. The power consumption is only of 4.1 mW and 2 mW for a 1.2 V and 0.7 V power supply, respectively.