A 10-Gb/s low-power low-voltage CTLE using gate and bulk driven transistors

Amin Aghighi, A. Alameh, M. Taherzadeh‐Sani, F. Nabki
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引用次数: 7

Abstract

The continuous time linear equalizer (CTLE) which compensates for the high frequency loss of electrical channels is one of the key components in the design of digital serializer / desrializer (SerDes) circuits. A new technique is described to improve the CTLE performance without any area or power overhead. This technique utilizes the bulk pin of transistors as a second gate. The proposed CTLE is designed and simulated in 130 nm CMOS technology. Post-layout simulation results demonstrate that the proposed technique can improve the eye opening of the conventional CTLE by approximately 68% at 10-Gb/s. The proposed CTLE compensates for the 12 dB loss of a 12 inches backplane at 10-Gb/s. The power consumption is only of 4.1 mW and 2 mW for a 1.2 V and 0.7 V power supply, respectively.
采用栅极和块驱动晶体管的10gb /s低功耗低压CTLE
补偿电通道高频损耗的连续时间线性均衡器(CTLE)是数字串行/描述器(SerDes)电路设计中的关键部件之一。本文介绍了一种不需要任何面积和功率开销就能提高CTLE性能的新技术。这种技术利用晶体管的体积引脚作为第二栅极。在130 nm CMOS工艺下设计并仿真了CTLE。布局后仿真结果表明,该技术在10gb /s速率下可将传统CTLE的孔径提高约68%。提出的CTLE补偿了12英寸背板在10gb /s下的12db损耗。1.2 V电源和0.7 V电源的功耗分别为4.1 mW和2 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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