Single and dual strained channel analysis of vertical strained — SiGe impact ionization MOSFET (VESIMOS)

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI:10.1109/RSM.2013.6706540

I. Saad, C. B. Seng, H. M. Zuhir, B. Nurmin, A. M. Khairul, B. Ghosh, R. Ismail, U. Hashim

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引用次数: 6

Abstract

Single Channel (SC) and Dual Channel (DC) Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS) has been successfully simulated and analyzed in this paper. Found out that SC VESIMOS operate in conventional MOSFET mode at V_DS = 1.75V, with 10% to 30% Ge mole fraction. However for Ge=50%, it's operated in Impact Ionization (II) mode with fast switching speed of subthreshold value, S=9.8 mV/dec. A better performance in threshold voltage, V_TH, S value and I_ON/I_OFF ratio were found in DC VESIMOS as compared to SC VESIMOS. The V_TH=0.6V, S=10.98 mV/dec and I_ON/I_OFF = 1×10¹³ were measured in DC VESIMOS with Ge=30% that clarify the advantage of DC utilization on VESIMOS device. These improvements were mainly due to the enhancement of electron mobility from 600 m²/V-s (first channel) to 1400 m²/V-s (second channel). The electron mobility was increased due to the splitting of conduction band valley into six fold where the electron mass are reduced in out of plane direction and thus enhanced the mobility of electron.

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垂直应变- SiGe冲击电离MOSFET (VESIMOS)的单、双应变通道分析

本文对单通道(SC)和双通道(DC)垂直应变sige冲击电离MOSFET (VESIMOS)进行了成功的仿真和分析。发现SC VESIMOS在VDS = 1.75V时工作在传统MOSFET模式下，Ge摩尔分数为10% ~ 30%。而当Ge=50%时，则工作在冲击电离(II)模式，开关速度快，亚阈值S=9.8 mV/dec。与SC VESIMOS相比，DC VESIMOS在阈值电压、VTH、S值和ION/IOFF比方面具有更好的性能。在Ge=30%的直流VESIMOS中，VTH=0.6V, S=10.98 mV/dec, ION/IOFF = 1×1013，说明了在VESIMOS器件上利用直流的优势。这些改进主要是由于电子迁移率从600 m2/V-s(第一通道)提高到1400 m2/V-s(第二通道)。由于导带谷分裂为6倍，电子的质量在非平面方向上减少，从而提高了电子的迁移率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics

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