A 4-Mbit trench DRAM technology functional test manufacturing/characterization strategy

Abstract

The authors discuss a 4-Mb substrate-plate-trench (SPT) DRAM (dynamic random access memory) technology applying an innovative manufacturing test strategy using the technology product chip, an addressable diagnostic monitor (ADM), and trench DC macroarray test structures. This manufacturing functional test strategy is effective in achieving process optimization, defect characterization, and high retention yield in a DRAM trench technology. Examples of the strategy's application in various situations and at different development stages are shown.<>