Linearity Performance of Double Metal Negative Capacitance Field-Effect Transistors: A Numerical Study

Abstract

In that work, we examined DM NCFETs (double metal negative capacitance field effect transistors) at better Linearity application in differentiate to the conventional device NCFETs through a recent thought of ferroelectric thick sheet (HfO2FE). Simulator of Visual TCAD is utilised to model NCFETs and DM NCFETs. The outcomes of DM NCFETs have been examined in the shape of transconductance (Gm) enhanced by 9.0%, Ioff (leakage current) decreased by 47.0% over NCFETs, and enhanced execution of Gd (output conductance), switching ratio Ion / Ioff, drain barrier induced lowering (DIBL) lowered by 6.0% over NCFETs, subthreshold swing (SS) declined by 5.0% over NCFETs. We examined also the linearity parameters such as intrinsic delay (Ti), second and third order of voltage intercept point (VIP2 and VIP3), third order inter modulation distortion (IMD3), third-order input intercept point (IIP3). Therefore, DM NCFETs could be applicable in digital and analog, linearity parameter circuit applications.