Deep trench isolation for a 50 V 0.35 /spl mu/m based smart power technology

F. De Pestel, P. Coppens, H. De Vleeschouwer, P. Colson, S. Boonen, T. Colpaert, P. Moens, D. Bolognesi, G. Coudenys, M. Tack
{"title":"Deep trench isolation for a 50 V 0.35 /spl mu/m based smart power technology","authors":"F. De Pestel, P. Coppens, H. De Vleeschouwer, P. Colson, S. Boonen, T. Colpaert, P. Moens, D. Bolognesi, G. Coudenys, M. Tack","doi":"10.1109/ESSDERC.2003.1256843","DOIUrl":null,"url":null,"abstract":"This paper describes the development of a deep trench isolation module for a new 0.35 /spl mu/m CMOS based smart power technology as well-as some major devices taking advantage of the features offered. by this deep trench isolation. The so-called I3T50 technology belongs to the third generation of intelligent interface technologies developed within AMI Semiconductor over the past years. This newest technology is suitable for applications up to 50 V, such as automotive, peripheral, industrial and consumer applications. Trench isolation is used to isolate the devices, hereby substantially reducing the isolation area. A full device library has been released within this technology (n-type and p-type CMOS and DMOS devices, bipolar transistors, high voltage floating diodes, passive components, OTP memory and a set of ESD protection structures).","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

This paper describes the development of a deep trench isolation module for a new 0.35 /spl mu/m CMOS based smart power technology as well-as some major devices taking advantage of the features offered. by this deep trench isolation. The so-called I3T50 technology belongs to the third generation of intelligent interface technologies developed within AMI Semiconductor over the past years. This newest technology is suitable for applications up to 50 V, such as automotive, peripheral, industrial and consumer applications. Trench isolation is used to isolate the devices, hereby substantially reducing the isolation area. A full device library has been released within this technology (n-type and p-type CMOS and DMOS devices, bipolar transistors, high voltage floating diodes, passive components, OTP memory and a set of ESD protection structures).
基于50 V 0.35 /spl mu/m的智能电源技术的深沟隔离
本文介绍了一种新的基于0.35 /spl mu/m CMOS的智能电源技术的深沟槽隔离模块的开发,以及一些利用其特性的主要器件。被这条深沟隔离所谓的I3T50技术属于AMI半导体在过去几年开发的第三代智能接口技术。这项最新技术适用于高达50 V的应用,如汽车,外围设备,工业和消费应用。采用沟槽隔离对器件进行隔离,从而大大减小了隔离面积。该技术已经发布了完整的器件库(n型和p型CMOS和DMOS器件、双极晶体管、高压浮动二极管、无源元件、OTP存储器和一套ESD保护结构)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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