P/G pad placement optimization: problem formulation for best IR drop

A. Dubey
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引用次数: 15

Abstract

IR drop minimization has become very difficult for non-flip chip packaged designs due to technology shrink and increasing design frequencies. Different constituents of IR drop on a wire-bond chip (where pads are placed at the die-periphery) are "package-ball to bond-pad drop", "bond-pad to internal global power ring drop" and "internal local power ring drop". Optimization equations are developed to minimize IR drop from the lead-finger-frame to the standard cell power rails on the die by placing the P/G pads optimally for a given power network. Further, optimization equations are developed to minimize trace wire length on package for P/G pads drawing highest current. The cost functions in the optimization equations target minimum IR drop for those regions of the chip that are switching at maximum speed. By use of our cost function for optimizing P/G pad placement, results on the representative chip with about 15 million gates and several hard macros show an improvement of 10% to 15% in worst IR drop value for different floorplans (one floorplan with uniform power density, and the other floorplan with maximum power density much higher than the average power density of the design).
P/G垫位优化:最佳IR下降的问题配方
由于技术收缩和设计频率的增加,对于非倒装芯片封装设计来说,红外下降最小化已经变得非常困难。线键芯片(焊盘放置在模具外围)上的红外滴有“封装球到键垫滴”、“键垫到内部全局功率环滴”和“内部局部功率环滴”三种成分。针对给定的电源网络,通过优化放置P/G焊盘,建立了优化方程,以最大限度地减少从引线指架到模具上标准电池电源轨的红外下降。此外,还开发了优化方程,以最小化封装上的走线长度,以获得最大电流的P/G焊盘。优化方程中的代价函数的目标是使芯片中以最快速度切换的区域的红外降最小。通过使用我们的成本函数来优化P/G焊盘放置,在具有大约1500万个栅极和几个硬宏的代表性芯片上的结果显示,对于不同的平面图(一个平面图具有均匀的功率密度,另一个平面图具有最大功率密度远高于设计的平均功率密度),最差IR下降值提高了10%至15%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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