SiGe BiCMOS LNA meeting FCC Part 15 ultra-wideband restrictions

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398198

Y.J. Llano, A.H. Guardado

引用次数: 3

Abstract

A fully integrated SiGe BiCMOS low noise amplifier (LNA) for ultra-wideband (UWB) has been implemented in a 0.4 /spl mu/m SiGe BiCMOS technology from Motorola Semiconductors. It features a cut-off frequency of 46 GHz. The LNA exhibits a wide bandwidth, from 3 to 10.5 GHz, with a flat gain of 24 dB. This amplifier shows a noise figure below 4.4 dB over the whole bandwidth and achieves good return losses without any matching network. This 3-10.5 GHz SiGe LNA design meets FCC Part 15 restrictions for UWB technology.

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SiGe BiCMOS LNA满足FCC第15部分超宽带限制

一款用于超宽带(UWB)的全集成SiGe BiCMOS低噪声放大器(LNA)采用摩托罗拉半导体的0.4 /spl μ l /m SiGe BiCMOS技术实现。它的特点是截止频率为46 GHz。LNA具有3 ~ 10.5 GHz的宽带宽，平坦增益为24 dB。该放大器在整个带宽上显示的噪声值低于4.4 dB，并且在没有任何匹配网络的情况下实现了良好的回波损耗。此3-10.5 GHz SiGe LNA设计符合FCC Part 15对UWB技术的限制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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