S. Mukhopadhyay, Keejong Kim, H. Mahmoodi, A. Datta, Dongkyu Park, K. Roy
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引用次数: 15
Abstract
We present a self-repairing SRAM to reduce parametric failures using an on-chip leakage sensor and application of proper body bias. Simulations in a predictive 70nm technology show 5-40% (depending on inter-die Vt variation) improvement in SRAM yield. A test-chip is fabricated and measured in 0.13 mum CMOS to demonstrate operation of the self-repair system