Double ionization of silicon and phosphorus by electron-impact

Santosh Kumar
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Abstract

I have calculated double ionization cross sections of silicon and phosphorus by electron impact using double binary encounter model. Hartree-Fock momentum distribution has been used for both the ejected electrons during collision process. Contributions from inner shell in the double ionization have been included in the calculations. The results obtained have been found in reasonably good agreement with the experimental observations.
硅和磷的电子撞击双电离
利用双二元相遇模型计算了硅和磷在电子碰撞作用下的双电离截面。碰撞过程中两种电子的抛射动量均采用Hartree-Fock动量分布。计算中包括了双电离中内壳层的贡献。所得结果与实验结果相当吻合。
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