Evaluating the effects of electromigration by using adjustable solder joints of concave shape

J. Jaeschke, J. Kleff, W. Muller, N. Nissen, H. Reichl
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引用次数: 1

Abstract

Further miniaturization of electronic systems is approaching new limits due to the failure mechanism of electromigration. Electromigration results in a transport of material in solder joints subjected to high electrical current densities. This decreases the system reliability and, therefore, it is necessary to assess and quantify this failure mechanism in solder joints. In this paper we discuss the development of new test structures based on modified flip chip structures, which allow monitoring of electromigration effects in lead-free solder joints. The structures are of concave shape which permits shifting of the failure region within the solder joint into a position suitable for deterministic assessment. For example it thus becomes possible to create a nearly homogeneous distribution of current density in the local failure region remote from interfering Inter-Metallic Compounds (IMCs) and material interfaces. Moreover, a smaller electric current is required to reach high current densities, so that Joule heating decreases. As a result the effects of overlying failure mechanisms are reduced to two main factors of influence, namely current density and temperature. Experiments using SnAg3.5 solder joints have been conducted at temperatures from 100°C to 150°C and current densities from 104 A/cm2 to 7.7×104 A/cm2. Joule heating is evaluated by finite element analysis (FEA) and measured during experiment. The activation energy is found to be 1.32 eV. A scanning electron microscope (SEM) is used to analyze failure characteristics of the structures and a direct comparison of the impacts of electromigration and thermomigration is performed. The results demonstrate the advantages mentioned before and qualify the structures for electromigration research.
利用凹形可调焊点评价电迁移效果
由于电迁移的失效机制,电子系统的进一步小型化正接近新的极限。在高电流密度下,电迁移导致焊点内材料的传输。这降低了系统的可靠性,因此,有必要评估和量化焊点的这种失效机制。在本文中,我们讨论了基于改进倒装芯片结构的新型测试结构的发展,该结构可以监测无铅焊点中的电迁移效应。该结构为凹形,允许将焊点内的失效区域移动到适合于确定性评估的位置。例如,在远离干扰的金属间化合物(IMCs)和材料界面的局部失效区域中,可以创建几乎均匀的电流密度分布。此外,为了达到高电流密度,需要更小的电流,因此焦耳加热减少。因此,上覆失效机制的影响减少到两个主要的影响因素,即电流密度和温度。使用SnAg3.5焊点进行的实验温度从100°C到150°C,电流密度从104 A/cm2到7.7×104 A/cm2。通过有限元分析对焦耳热进行了评价,并在实验中进行了测量。其活化能为1.32 eV。利用扫描电子显微镜(SEM)分析了结构的破坏特征,并对电迁移和热迁移的影响进行了直接比较。结果证明了上述优点,使该结构适合电迁移研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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