10/sup 16/ cm/sup -3/ electrically active and thermally stable deep Rh acceptors in InP

Abstract

We present a detailed investigation of the electrically active Rh concentration in low-pressure metalorganic chemical vapor-phase epitaxy grown InP:Rh in dependence of the growth parameters. Rh introduces two deep mid gap acceptor levels RhA and RhB in InP at E/sub v/+0.71 eV and E/sub v/+0.62 eV, respectively. Taking into account the low diffusivity of Rh in InP (D/sub rh/(800/spl deg/C)/spl les/1/spl times/10/sup 14/ cm/sup 2//s) Rh is an interesting candidate as compensating dopant for thermally stable semi-insulating InP. We show that the electrically active Rh concentration can be increased by a factor 5 using the inert carrier gas N/sub 2/ instead of H/sub 2/.