Characterization and modeling of high frequency monolithic PIN diodes on SOI substrate

Abstract

We present high frequency measurements, simulation and modeling of PIN diodes on SOI substrate from 40 MHz to 40 GHz and from 74 to 114 GHz. Comparison between simulations and measurements brings to the fore a frequency dependent PIN diode capacitance with reverse bias. We show that the free carriers injected in the diode intrinsic channel induce a frequency dependent complex permittivity of the silicon substrate that is responsible for the frequency behaviour of the PIN diode capacitance. Moreover, no adjustable parameter is required in this model as all the required parameters can be easily measured.