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Modeling of the Forming Operation in HfO2-Based Resistive Switching Memories

2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI:10.1109/IMW.2011.5873224
L. Vandelli, A. Padovani, G. Bersuker, D. Gilmer, P. Pavan, L. Larcher
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引用次数: 25

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基于hfo2的阻性开关存储器成形过程的建模
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2011 3rd IEEE International Memory Workshop (IMW)
2011 3rd IEEE International Memory Workshop (IMW)
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