T. Umezawa, K. Akahane, N. Yamamoto, K. Inagaki, A. Kanno, T. Kawanishi
{"title":"Ultra-broadband UTC-PD beyond 110 GHz at 0 V for future photonic integration","authors":"T. Umezawa, K. Akahane, N. Yamamoto, K. Inagaki, A. Kanno, T. Kawanishi","doi":"10.1109/MWP.2014.6994596","DOIUrl":null,"url":null,"abstract":"We have successfully realized the non-bias operation of an ultra-wide bandwidth uni-traveling-carrier photodetector (UTC-PD) using a low carrier concentration of 3 × 1014 cm-3 in the carrier collection layer for future high-density photonic integration. A 3-dB bandwidth above 110 GHz was confirmed without a bias circuit. In this paper, we discuss the proposed design and the experimental results obtained for the frequency response and maximum RF output power.","PeriodicalId":220534,"journal":{"name":"Microwave Photonics (MWP) and the 2014 9th Asia-Pacific Microwave Photonics Conference (APMP) 2014 International Topical Meeting on","volume":"38 7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave Photonics (MWP) and the 2014 9th Asia-Pacific Microwave Photonics Conference (APMP) 2014 International Topical Meeting on","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWP.2014.6994596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We have successfully realized the non-bias operation of an ultra-wide bandwidth uni-traveling-carrier photodetector (UTC-PD) using a low carrier concentration of 3 × 1014 cm-3 in the carrier collection layer for future high-density photonic integration. A 3-dB bandwidth above 110 GHz was confirmed without a bias circuit. In this paper, we discuss the proposed design and the experimental results obtained for the frequency response and maximum RF output power.