{"title":"Overview and future challenges of Floating Body RAM (FBRAM) technology for 32nm technology node and beyond","authors":"T. Hamamoto, T. Ohsawa","doi":"10.1109/ESSDERC.2008.4681692","DOIUrl":null,"url":null,"abstract":"Floating body cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single cell (1Cell/Bit) operation, are reviewed. Based on the experimental results, the scalability of FBC is also discussed.","PeriodicalId":121088,"journal":{"name":"ESSDERC 2008 - 38th European Solid-State Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2008 - 38th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2008.4681692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Floating body cell (FBC) is a one-transistor memory cell on SOI substrate, which aims high density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single cell (1Cell/Bit) operation, are reviewed. Based on the experimental results, the scalability of FBC is also discussed.