Controlling the TCR of thin film resistors

P. Steinmann, S. M. Jacobsen, R. Higgins
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引用次数: 5

Abstract

We demonstrate that the temperature coefficient of resistance (TCR) of NiCr thin film resistors can be effectively controlled by changing the film thickness over a certain range. We have observed a direct dependency between TCR and sheet resistance, which can be expressed by the equation: TCR(in ppm/C)=525*exp(0.01*sheet (in Ohms/sq)). This behavior can be explained by considering the transition from a bulk conductivity mechanism to a mechanism dominated by charge carrier creation and tunneling between metallic islands.
控制薄膜电阻器的TCR
研究结果表明,在一定范围内改变NiCr薄膜电阻器的薄膜厚度,可以有效地控制其电阻温度系数。我们已经观察到TCR和薄片电阻之间的直接依赖关系,可以用公式表示:TCR(以ppm/C表示)=525*exp(0.01*薄片(以欧姆/平方表示))。这种行为可以通过考虑从体电导率机制到由载流子产生和金属岛间隧道主导的机制的转变来解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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