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High efficiency silicon MIS/IL solar cells under external back bias

Proceedings of the Nineteenth National Radio Science Conference Pub Date : 2002-11-07 DOI:10.1109/NRSC.2002.1022663
A.K. Abou Alsoud, N. Elfaramawy, M. Attala, A. Hafez
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Abstract

A model to study the performance of a metal-insulator-semiconductor with induced inversion layer (MIS/IL) solar cells as the Al/tunnel-oxide/p-Si structure was developed. The solution included the effect of change in cell parameters namely: doping concentration, oxide thickness, mobile charge density and metal work function. It also included the dependence on the mobile charge density and fixed oxide charge density. A back bias applied between substrate and metal inversion grid was added to the solution. It bias found out that the efficiency is sensitive to change in external back bias. Optimization of efficiency was sought in the range, when 0
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外背偏置下的高效硅MIS/IL太阳能电池
建立了具有诱导反转层(MIS/IL)的金属-绝缘体-半导体太阳能电池作为Al/隧道-氧化物/p-Si结构的性能模型。该方案包括电池参数变化的影响，即:掺杂浓度、氧化物厚度、移动电荷密度和金属功函数。它还包括对移动电荷密度和固定氧化物电荷密度的依赖。在溶液中加入了衬底与金属倒转栅之间的背偏置。结果表明，效率对外部背偏压的变化非常敏感。在0
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Proceedings of the Nineteenth National Radio Science Conference
Proceedings of the Nineteenth National Radio Science Conference
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