{"title":"Energy Efficiency of Low Swing Signaling for Emerging Interposer Technologies","authors":"E. Maragkoudaki, P. Mroszczyk, V. Pavlidis","doi":"10.1145/3232195.3232203","DOIUrl":null,"url":null,"abstract":"Interconnects often constitute the major bottleneck in the design process of low power integrated circuits (IC). Although 2.5-D integration technologies support physical proximity, the dissipated power in the communication links remains high. In this work, the additional power savings for interposer-based interconnects enabled by low swing signaling is investigated. The energy consumed by a low swing scheme is, therefore, compared with a full swing solution and the critical length of the interconnect, above which the low swing solution starts to pay off, is determined for diverse interposer technologies. The energy consumption is compared for three different substrate materials, silicon, glass, and organic. Results indicate that the higher the load capacitance of the communication medium is, the greater the energy savings of the low swing circuit are. Specifically, in cases that electrostatic discharge (ESD) protection is required, the low swing circuit is always superior in terms of energy consumption due to the high capacitive load of the ESD circuit, regardless the substrate material and the link length. Without ESD protection, the highest critical length is about 380 μm for glass and organic interposers. To further explore the limits of power reduction from low swing signaling for 2.5-D ICs, the effect of typical interconnect parameters such as width and space on the energy efficiency of low swing communication is evaluated.","PeriodicalId":401010,"journal":{"name":"2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/3232195.3232203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Interconnects often constitute the major bottleneck in the design process of low power integrated circuits (IC). Although 2.5-D integration technologies support physical proximity, the dissipated power in the communication links remains high. In this work, the additional power savings for interposer-based interconnects enabled by low swing signaling is investigated. The energy consumed by a low swing scheme is, therefore, compared with a full swing solution and the critical length of the interconnect, above which the low swing solution starts to pay off, is determined for diverse interposer technologies. The energy consumption is compared for three different substrate materials, silicon, glass, and organic. Results indicate that the higher the load capacitance of the communication medium is, the greater the energy savings of the low swing circuit are. Specifically, in cases that electrostatic discharge (ESD) protection is required, the low swing circuit is always superior in terms of energy consumption due to the high capacitive load of the ESD circuit, regardless the substrate material and the link length. Without ESD protection, the highest critical length is about 380 μm for glass and organic interposers. To further explore the limits of power reduction from low swing signaling for 2.5-D ICs, the effect of typical interconnect parameters such as width and space on the energy efficiency of low swing communication is evaluated.
互连往往是低功耗集成电路设计过程中的主要瓶颈。尽管2.5维集成技术支持物理接近,但通信链路中的耗散功率仍然很高。在这项工作中,研究了通过低摆幅信令实现的基于中间层的互连的额外功耗节省。因此,将低摆幅方案所消耗的能量与全摆幅方案进行比较,并根据不同的中间器技术确定低摆幅方案开始发挥作用的互连的临界长度。能源消耗比较了三种不同的衬底材料,硅,玻璃和有机。结果表明,通信介质的负载电容越高,低摆幅电路的节能效果越大。具体来说,在需要静电放电(ESD)保护的情况下,无论衬底材料和链路长度如何,由于ESD电路的高容性负载,低摆幅电路在能耗方面总是优于低摆幅电路。在没有ESD保护的情况下,玻璃和有机中间层的最高临界长度约为380 μm。为了进一步探讨2.5 d ic低摆幅信号的功耗降低限制,我们评估了典型的互连参数(如宽度和空间)对低摆幅通信能量效率的影响。