Oriented SnS thin films formed by nano-multilayer method

Abstract

Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed by thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The films showed strong (040) crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity of 5 Ω•cm.