{"title":"/spl plusmn/1.5 V CMOS four-quadrant multiplier","authors":"S.C. Li","doi":"10.1109/ASPDAC.1997.600283","DOIUrl":null,"url":null,"abstract":"A low-voltage CMOS four-quadrant analogue multiplier using two NMOS operated in the triode region with modified bi-directional regulated cascode (RGC) structure is presented. The circuit can operate from a supply voltage of /spl plusmn/1.5 V. For a differential input voltage range up to /spl plusmn/0.8 V, this circuit has kept nonlinearity below 0.9% and total harmonic distortion less than 1%. The -3dB bandwidth of this multiplier is 15 MHz. The chip was fabricated in Taiwan Semiconductor Manufacturing Corporation (TSMC) 0.8 /spl mu/m Single-Poly-Double-Metal (SPDM) N-well process. The chip dissipates 24.4 mW and occupies 251/spl times/653 /spl mu/m/sup 2/ active area.","PeriodicalId":242487,"journal":{"name":"Proceedings of ASP-DAC '97: Asia and South Pacific Design Automation Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ASP-DAC '97: Asia and South Pacific Design Automation Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.1997.600283","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A low-voltage CMOS four-quadrant analogue multiplier using two NMOS operated in the triode region with modified bi-directional regulated cascode (RGC) structure is presented. The circuit can operate from a supply voltage of /spl plusmn/1.5 V. For a differential input voltage range up to /spl plusmn/0.8 V, this circuit has kept nonlinearity below 0.9% and total harmonic distortion less than 1%. The -3dB bandwidth of this multiplier is 15 MHz. The chip was fabricated in Taiwan Semiconductor Manufacturing Corporation (TSMC) 0.8 /spl mu/m Single-Poly-Double-Metal (SPDM) N-well process. The chip dissipates 24.4 mW and occupies 251/spl times/653 /spl mu/m/sup 2/ active area.