Next generation power module

T. Yamada, G. Majumdar, S. Mori, H. Hagino, H. Kondoh, T. Hirao
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引用次数: 31

Abstract

A brief history of power semiconductors, starting from its bipolar based origin to the state-of-art Intelligent Power Modules (IPMs), has been briefly reviewed at first, and is followed by an analysis of the changing requirements from the application fields. In accordance with it, next generation IPMs with new concepts have been proposed. The next generation IPMs are expected to grow in two specific directions. One is a growth toward a high power zone where performance enhancement by use of new IGBT structure and additional protection would be essential. Second is a growth toward low power zone where an ASIC-like system integration approach by use of new HVICs and packaging would be essential.
下一代电源模块
本文首先简要回顾了功率半导体的历史,从其基于双极的起源到最先进的智能功率模块(ipm),然后分析了应用领域不断变化的需求。据此,提出了具有新概念的下一代ipm。下一代ipm预计将在两个特定方向上增长。一个是向高功率区域的增长,在这个区域,通过使用新的IGBT结构和额外的保护来提高性能是必不可少的。其次是向低功耗区域的增长,其中使用新的hvic和封装的类似asic的系统集成方法将是必不可少的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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