T. Yamada, G. Majumdar, S. Mori, H. Hagino, H. Kondoh, T. Hirao
{"title":"Next generation power module","authors":"T. Yamada, G. Majumdar, S. Mori, H. Hagino, H. Kondoh, T. Hirao","doi":"10.1109/ISPSD.1994.583616","DOIUrl":null,"url":null,"abstract":"A brief history of power semiconductors, starting from its bipolar based origin to the state-of-art Intelligent Power Modules (IPMs), has been briefly reviewed at first, and is followed by an analysis of the changing requirements from the application fields. In accordance with it, next generation IPMs with new concepts have been proposed. The next generation IPMs are expected to grow in two specific directions. One is a growth toward a high power zone where performance enhancement by use of new IGBT structure and additional protection would be essential. Second is a growth toward low power zone where an ASIC-like system integration approach by use of new HVICs and packaging would be essential.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583616","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 31
Abstract
A brief history of power semiconductors, starting from its bipolar based origin to the state-of-art Intelligent Power Modules (IPMs), has been briefly reviewed at first, and is followed by an analysis of the changing requirements from the application fields. In accordance with it, next generation IPMs with new concepts have been proposed. The next generation IPMs are expected to grow in two specific directions. One is a growth toward a high power zone where performance enhancement by use of new IGBT structure and additional protection would be essential. Second is a growth toward low power zone where an ASIC-like system integration approach by use of new HVICs and packaging would be essential.