Metal capping of MCM thin film features using a laser

R. Patel, T. Wassick, C.Y. Ralston
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引用次数: 2

Abstract

A laser process to provide a thin barrier or capping metal, over the copper features of a multichip module thin film (MCM-D) structure is described. Capping of copper features is required to avoid copper corrosion and diffusion into overlaying dielectric layers of thin film structure. Furthermore, in a multilevel thin film structure, certain barrier metals provide improved adhesion for the subsequent dielectric layer. Experiments with XeCl and Nd:YAG lasers were performed to determine the best laser source for a copper/polymer/ceramic material set. The laser capping process is more robust and quicker than conventional photolithography or electroless plating capping processes, while eliminating the wet chemical operations. Also, the laser capping process eliminates the undercapping and variable capping metal thickness problems associated with photolithography and/or electroless plating techniques. The results of capping metal features on bare glass ceramic and polymer surfaces are described.<>
用激光对MCM薄膜进行金属封盖
描述了在多芯片模块薄膜(MCM-D)结构的铜特征上提供薄屏障或覆盖金属的激光工艺。为了避免铜腐蚀和扩散到薄膜结构的复盖介电层中,需要对铜的特征进行封盖。此外,在多层薄膜结构中,某些阻挡金属为随后的介电层提供改进的附着力。用XeCl和Nd:YAG激光器进行了实验,以确定铜/聚合物/陶瓷材料组的最佳激光源。激光旋盖工艺比传统的光刻或化学镀旋盖工艺更坚固、更快,同时消除了湿化学操作。此外,激光封盖工艺消除了与光刻和/或化学镀技术相关的欠封盖和可变封盖金属厚度问题。描述了在裸露的玻璃陶瓷和聚合物表面上覆盖金属特征的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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