Constant field stressing of via-to-line spacing for accurate projection of intrinsic TDDB lifetime

T. Kamoshima, K. Makabe, M. Amishiro, T. Furusawa, Y. Takata, M. Ogasawara
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引用次数: 7

Abstract

We proposed solutions for determining the accurate projection of the TDDB lifetime of via-to-line spacing; that is, using a single-via test structure and constant field stress. This method eliminates the lifetime variations due to the spacing variations more effectively than conventional methods, for example, area scaling. The projected lifetime under the given use conditions increased at least about two-orders of magnitude by using this method, showing that constant field stress can be used to effectively project intrinsic TDDB lifetimes.
为准确预测TDDB固有寿命,通过孔到线间距的恒定场应力
我们提出了确定通孔到线间距TDDB寿命精确投影的解决方案;也就是说,使用单通孔测试结构和恒定的场应力。该方法比传统方法(如面积缩放)更有效地消除了由间距变化引起的寿命变化。在给定的使用条件下,使用该方法预测的寿命至少增加了约两个数量级,表明恒定的应力场可以有效地预测固有的TDDB寿命。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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